Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 1085-1090

  Jia, A ^a   Furushima, T ^a   Kobayashi, M ^a   Kato, Y ^a   Shimotomai, M ^a   Yoshikawa, A ^a   Takahashi, K ^b  

^a CHIBA UNIVERSITY   (Japan)

^b TEIKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR LASERS; SUBSTRATES; TEMPERATURE; X RAY DIFFRACTION;

BAND LINEUPS; HEXAGONAL PHASE;

LIGHT EMITTING DIODES;

EID: 0033688224     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00279-7     Document Type: Article

References (7)

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3. A. Yoshikawa, Proceedings of the Nineth Meeting of the 162nd Committee of the Japan Society for the Promotion of Science December 1997, p. 3. This was also registered as the Japanese Patent.
4. W.A. Harrison Electronic Structure and the Properties of Solids 1980 Freeman San Francisco
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7. Z.X. Qin M. Kobayashi A. Yoshikawa J. Mater. Sci. 10 1999 199