Photoresponse on surface acoustic wave devices with compound semiconductor and LiNbO3 structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 B, 2000, Pages 3004-3009

  Kaneshiro, Chinami ^a   Suda, Takaya ^a   Aoki, Yusuke ^a   Hong, Chulun ^a   Koh, Keishin ^a   Hohkawa, Kohji ^a  

^a KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AIGaAs; Interaction between SAW and carrier; Photoresponse; SAW device coupled with semiconductor; Y Z LiNbO3

Indexed keywords

CHARGE CARRIERS; LITHIUM NIOBATE; PHOTOACOUSTIC EFFECT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE;

PHOTOINDUCED CARRIERS; PHOTORESPONSE;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 0033688221     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3004     Document Type: Article

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