Quasi-monolithic GaAs/LiNbO3-hybrids for acoustoelectric applications

Proceedings of the IEEE Ultrasonics Symposium

Volumn 1, Issue , 1997, Pages 201-204

  Rotter, Markus ^a   Wixforth, Achim ^a   Kotthaus, Joerg P ^a   Ruile, Werner ^a   Bernklau, Daniela ^a   Riechert, Henning ^a  

^a UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE VELOCITY; ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; LITHIUM COMPOUNDS; MONOLITHIC INTEGRATED CIRCUITS; PHASE SHIFT; PIEZOELECTRIC MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ALUMINUM GALLIUM ARSENIDE; ELECTRICAL BOUNDARY CONDITION; ELECTROMECHANICAL COUPLING COEFFICIENT; EPITAXIAL LIFT OFF TECHNIQUE; INDIUM GALLIUM ARSENIDE; LITHIUM NIOBATE; QUASI-MONOLITHICAL INTEGRATION;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 0031341722     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)