Optimized technology for the fabrication of piezoresistive pressure sensors

Journal of Micromechanics and Microengineering

Volumn 10, Issue 2, 2000, Pages 204-208

  Merlos, A ^a   Santander, J ^a   Alvarez, M D ^a   Campabadal, F ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DIAPHRAGMS; ETCHING; MASKS; OPTIMIZATION; PHOTOLITHOGRAPHY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

BOUNDED AND ETCH SILICON ON INSULATOR; BURIED SILICON OXIDE LAYER; PIEZORESISTIVE PRESSURE SENSORS;

SILICON SENSORS;

EID: 0033687021     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/10/2/318     Document Type: Article

References (9)

1. Clark S K and Wise K D 1979 Pressure sensitivity in anisotropically etched thin diaphragm pressure sensors IEEE Trans. Electron Devices 26 1887-96
2. Kloeck B, Collins S D, de Rooij N F and Smith R L 1989 Study of electrochemical etch-stop for high precision thickness control of silicon membranes IEEE Trans. Electron Devices 36 663-9
3. Marco S, Samitier J, Morante J R, Götz A and Esteve J 1995 Novel structures for miniature pressure transducers obtained by electrochemical etch-stop on diffused membranes Sensors Mater. 7 331-45
4. Chen Q G, Zhang J H and Teng Z J 1987 Silicon-on-sapphire pressure sensor Proc. Int. Conf. Solid-State Sensors and Actuators (Tokyo, Japan, 1987) pp 320-3
5. Diem B, Rey P, Renard S, Viollet Bosson S, Bono H, Michel F, Delaye M T and Delapierre G 1994 SOI SIMOX: from bulk to surface micromachining, a new age for silicon sensors and actuators Proc. Eurosensors VIII (Toulouse, France, September, 1994) vol 2, pp 8-16
6. Yoshii Y, Nakajo A, Abe H, Ninomiya K, Miyashita H, Sakurai N, Kosuge M and Hao S 1997 1 chip integrated software calibrated CMOS pressure sensor with MCU, A/D converter, digital communication port, signal conditioning circuit and temperature sensor Proc. Transducers'97 (Chicago, USA, June, 1997) pp 1485-8
7. Lasky J B, Stiffer S R, White F R and Abernathey J R 1985 Silicon-on-insulator (SOI) by bonding and etch-back Tech. Dig. Int. Electron Devices Meeting (Washington, DC, December, 1985) pp 684-7
8. Benítez M A, Esteve J and Bausells J 1995 Bulk silicon micro electro mechanical devices fabricated from commercial BESOI substrates Sensors Actuators A 50 99-103
9. Plaza J A, Esteve J and Lora-Tamayo E 1998 Simple technology for bulk accelerometer based on bond and etch back silicon on insulator wafers Sensors Actuators A 68 299-302