Influence of current spreading on the transparency current density of quantum-well lasers

Semiconductor Science and Technology

Volumn 15, Issue 6, 2000, Pages 557-560

  Wenzel, H ^a   Erbert, G ^a   Knauer, A ^a   Oster, A ^a   Vogel, K ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

EPITAXIAL WAFER; THRESHOLD CURRENT; TRANSPARENCY CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0033685891     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/6/312     Document Type: Article

References (5)

1. DeTemple T A and Herzinger C M 1993 On the semiconductor laser logarithmic gain-current density relation IEEE J. Quantum Electron. 29 1246-52
2. Smowton P M and Blood P 1997 The differential efficiency of quantum-well lasers IEEE J. Select. Topics Quantum Electron. 3 491-8
3. Hu S Y, Young D B, Gossard A C and Coldren L A 1994 The effect of lateral leakage current on the experimental gain/current-density curve in quantum-well ridge-waveguide lasers IEEE J. Quantum Electron. 30 2245-50
4. Letal G J, Simmons J G, Evans J D and Li G P 1998 Determination of active-region leakage currents in ridge-waveguide strained-layer quantum-well lasers by varying the ridge width IEEE J. Quantum Electron. 34 512-18
5. Wenzel H and Erbert G 1996 Simulation of single-mode high-power lasers Proc. SPIE 2693 418-29