Photoluminescence core-level excitation of CdSe quantum dot structures

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 752-755

  Maehashi, Kenzo ^a   Kobayashi, Keisuke ^a   Ota, Takeshi ^a   Nakashima, Hisao ^a   Ishiwata, Yoichi ^b   Shin, Shik ^b  

^a OSAKA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY;

ABSORPTION EDGE; CADMIUM SELENIDE; EXCITATION ENERGY; INTERFACIAL STATE; PHOTOLUMINESCENCE CORE LEVEL EXCITATION; ZINC SELENIDE;

MOLECULAR BEAM EPITAXY;

EID: 0033683535     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00217-7     Document Type: Article

References (3)

1. Fujisawa M., Harasawa A., Agui A., Watanabe M., Kakizaki A., Shin S., Ishii T., Kita T., Harada T., Saitoh Y., Suga S. Rev. Sci. Instr. 67:1996;345.
2. K. Maehashi, N. Yasui, Y. Murase, A. Shikimi, H. Nakashima, Appl. Surf. Sci. (2000), in press.
3. Maehashi K., Morota N., Murase Y., Nakashima H. Jpn. J. Appl. Phys. 38:1999;1339.