ZnS-based visible-blind UV detectors: Effects of isoelectronic traps

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 723-726

  Sou, I K ^a   Ma, Z H ^a   Wong, G K L ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTODIODES; SCHOTTKY BARRIER DIODES; ULTRAVIOLET DETECTORS; ZINC SULFIDE;

ISOELECTRONIC TRAP EFFECTS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033683395     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0213-2     Document Type: Article

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