Use of two beam energies in secondary ion mass spectrometry analysis of shallow implants: Resolution-matched profiling

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 493-495

  Cooke, G A ^a   Ormsby, T J ^a   Dowsett, M G ^a   Parry, C ^a   Murrell, A ^b   Collart, E J H ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b Applied Materials   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; EXTRAPOLATION; IMAGE ANALYSIS; IMAGE QUALITY; INTERDIFFUSION (SOLIDS); ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS;

LOW-ENERGY IMPLANTS; RESOLUTION-MATCHED PROFILING;

SEMICONDUCTOR JUNCTIONS;

EID: 0033683234     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591218     Document Type: Article

References (1)

1. K. Wittmaack, Surf. Interface Anal. 24, 389 (1996).