Single-wall carbon nanotube based devices

Carbon

Volumn 38, Issue 11, 2000, Pages 1745-1749

  Lefebvre, J ^a   Antonov, R D ^a   Radosavljevic M ^a   Lynch, J F ^a   Llaguno, M ^a   Johnson, A T ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; CRYSTAL IMPURITIES; ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

NANOMANIPULATIONS; SINGLE-WALL CARBON NANOTUBES;

NANOTUBES;

EID: 0033683117     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0008-6223(00)00050-6     Document Type: Article

References (19)

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6. Antonov RD. PhD thesis. University of Pennsylvania, unpublished, 1999.
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11. Lefebvre J et al., submitted to Appl Phys Lett.
12. Lefebvre J et al., to be published.
13. The composition of the impurity remains unknown. As-grown nanotube material contains a significant impurity content, including metal catalyst, graphitic particles and amorphous carbons.
14. Antonov RD, Johnson AT, to appear in Phys Rev Lett.
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