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Volumn 2, Issue , 2000, Pages 731-734

Low power 20 GHz SiGe dual-modulus prescaler

Author keywords

[No Author keywords available]

Indexed keywords

SILICON GERMANIUM BIPOLAR TECHNOLOGY; SILICON GERMANIUM DUAL MODULUS PRESCALER;

EID: 0033678292     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (8)

References (5)
  • 1
    • 0033191726 scopus 로고    scopus 로고
    • SiGe bipolar 5.5 GHz dual-modulus prescaler
    • Sept
    • B.-U. Klepser, "SiGe bipolar 5.5 GHz dual-modulus prescaler", Electronics Letters, vol. 35, no. 20, pp. 1728-1729, Sept 1999.
    • (1999) Electronics Letters , vol.35 , Issue.20 , pp. 1728-1729
    • Klepser, B.-U.1
  • 3
    • 0032309693 scopus 로고    scopus 로고
    • A 27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs
    • Nov. 1998
    • S. Wada, T. Maeda, M. Tokushima, J. Yamazaki, M. Ishikawa, and M. Fujii, "A 27 GHz/151 mW GaAs 256/258 Dual-Modulus Prescaler IC with 0.1-μm Double-Deck-Shaped (DDS) Gate E/D-HJFETs", 1998 GaAs IC Symposium Technical Digest, pp. 125-128, Nov. 1998.
    • (1998) GaAs IC Symposium Technical Digest , pp. 125-128
    • Wada, S.1    Maeda, T.2    Tokushima, M.3    Yamazaki, J.4    Ishikawa, M.5    Fujii, M.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.