27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1998, Pages 125-128

  Wada, Shigeki ^a   Maeda, Tadashi ^a   Tokushima, Masatoshi ^a   Yamazaki, Jin ^a   Ishikawa, Masaoki ^a   Fujii, Masahiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRIC CURRENTS; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MANUFACTURE; VOLTAGE MEASUREMENT;

MODULUS PRESCALER INTEGRATED CIRCUITS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0032309693     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)