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Integrated Ferroelectrics

Volumn 29, Issue 1-2, 2000, Pages 33-41

Raman scattering in the aurivillius-layered ferroelectric SrBi2Ta2O9 - Bi3TiNbO9 thin films

(6) Ching Prado, E a Perez W b Dobal, P S b Katiyar, R S b Tirumala, S c Desu, S B c

a UNIVERSIDAD TECNOLÓGICA DE PANAMÁ (Panama)

b UNIVERSITY OF PUERTO RICO (Puerto Rico)

c Virginia Polytechnic Institute and State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AURIVILLIUS LAYERED FERROELECTRICS; FERROELECTRIC THIN FILM;

BAND STRUCTURE; BISMUTH COMPOUNDS; CRYSTAL DEFECTS; CRYSTALLIZATION; DEPOSITION; FERROELECTRIC MATERIALS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; STRESSES; STRONTIUM COMPOUNDS; SUBSTRATES;

THIN FILMS;

EID: 0033645628 PISSN: 10584587 EISSN: None Source Type: Journal
DOI: 10.1080/10584580008216672 Document Type: Article

Times cited : (5)

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