Extracted current turn-off model for type of the power MOS transistor with conductivity modulation

Chinese Journal of Electronics

Volumn 7, Issue 3, 1998, Pages 223-227

  Li, Zhaoji ^a,b   Zhang, Min ^a   Zhao, J M ^a   Li, X N ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b Res Institute of Microelectronics   (China)

Author keywords

Conductivity modulation effect; Excess carriers; Non quasi static state; Power MOS bipolar transistor; Transient analysis

Indexed keywords

BIPOLAR TRANSISTORS; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC NETWORK ANALYSIS; POWER ELECTRONICS;

CONDUCTIVITY MODULATION EFFECTS;

MOSFET DEVICES;

EID: 0032116177     PISSN: 10224653     EISSN: 20755597     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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