Treatment of Ti-Si contact in hydronitrogen plasma

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 165-169

  Chaplanov, A M ^a   Shcherbakova, E N ^a  

^a B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; INTERFACES (MATERIALS); PHASE TRANSITIONS; PLASMA APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; TITANIUM; TITANIUM NITRIDE;

HYDRONITROGEN PLASMAS; TITANIUM DISILICIDES;

SILICON WAFERS;

EID: 0033640193     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00278-6     Document Type: Article

References (6)

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2. Wang S.-Q., Raaijmakers I., Burrov B.J., Suthar S., Ki-Bum K. Reactively sputtered TiN as diffusion barrier between Cu and Si. J. Appl. Phys. 68:(10):1990;5176-5187.
3. Kim D.-H., Kim K.-B. Diffusion barrier performance of chemically vapor deposited TiN films prepared using tetrakis-demethul-amino titanium in the Cu/TiN/Si structure. Appl. Phys. Lett. 69:(27):1996;4182-4184.
4. x/Si structures. Appl. Phys. Lett. 58:(5):1991;469-471.
5. Arzamasov B.N. Chemical-thermal Treatment of Metals in Activated Gaseous Environment. 1979;Mashinostroenie Publishers, Moscow. (in Russian).
6. Till W., Laxon J. Integrated Circuits: Materials, Devices and Fabrication. 1985;Mir Publishers, Moscow. (in Russian).