SILK compatibility with the IMD process using copper metallization

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 25-32

  Maisonobe, J C ^a   Passemard, G ^b   Lacour, C ^b   Lecornec, ^a   Motte, P ^b   Noel P ^a   Torres, J ^c  

^a CEA GRENOBLE   (France)

^b ST Microlectron Ctrl RD/Jt P   (France)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CURING; MASKS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON NITRIDE; THERMODYNAMIC STABILITY; TITANIUM NITRIDE;

DAMASCENE STRUCTURE; INTERMODULATION DISTORTION (IMD);

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0033640066     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00260-9     Document Type: Article

References (2)

1. Towsend P.H., Martin S.J., Godschaix J., Romer D.R., Smith D.W., Castillo D., De Vries R., Buske G., Rondan N., Froelicher S., Marshall J., Shaffer E.O., Im J.M. Mater. Res. Soc. Symp. Proc. 476:1997.
2. Passemard G., Torres J., Vinet F., Ravel L., Motte P., Pires F., Lecornec Ch., Noël P., Maisonobe J.C., Palleau J. Proceedings of the VMIC Conference, Santa Clara, CA, USA :1998;63.