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Volumn 50, Issue 1-4, 2000, Pages 153-158

Investigation of C49-C54 TiSi2 transformation kinetics

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL GROWTH; ELECTRIC RESISTANCE MEASUREMENT; HEAT TREATMENT; ION IMPLANTATION; NUCLEATION; PHASE TRANSITIONS; SEMICONDUCTOR GROWTH; SPECTROMETRY; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

EID: 0033639799     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00276-2     Document Type: Article
Times cited : (8)

References (9)
  • 2
    • 36448999839 scopus 로고
    • Microstructural aspects and mechanism of the C49-to-C54 polymorphic transformation in titanium silicide
    • Ma Z., Allen L.H., Allman D.D.J. Microstructural aspects and mechanism of the C49-to-C54 polymorphic transformation in titanium silicide. J. Appl. Phys. 77:1995;4384-4388.
    • (1995) J. Appl. Phys. , vol.77 , pp. 4384-4388
    • Ma, Z.1    Allen, L.H.2    Allman, D.D.J.3
  • 4
    • 0031130846 scopus 로고    scopus 로고
    • 2 phase transition temperature on film thickness and Si substrate orientation
    • 2 phase transition temperature on film thickness and Si substrate orientation. Thin Solid Films. 299:1997;178-182.
    • (1997) Thin Solid Films , vol.299 , pp. 178-182
    • Jeon, H.1    Yoon, G.2    Nemanich, R.J.3
  • 9
    • 0012826412 scopus 로고
    • Nucleation and growth of titanium silicide studied by in situ annealing in a transmission electron microscope
    • Raaijmakers I.J.M.M., Reader A.H., van Houtum H.J.W. Nucleation and growth of titanium silicide studied by in situ annealing in a transmission electron microscope. J. Appl. Phys. 61:1987;2527-2532.
    • (1987) J. Appl. Phys. , vol.61 , pp. 2527-2532
    • Raaijmakers, I.J.M.M.1    Reader, A.H.2    Van Houtum, H.J.W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.