Crystallization and surface erosion of SiC by ion irradiation at 500°C

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 358-362

  Heera, V ^a   Stoemenos, J ^b   Kogler R ^a   Voelskow, M ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

Ion implantation; Recrystallization; SiC; Surface erosion

Indexed keywords

CRYSTALLIZATION; DENSIFICATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; SWELLING;

SURFACE EROSION;

SILICON CARBIDE;

DEFORMATION; EROSION; IRRADIATION; SURFACE DEGRADATION;

EID: 0033618666     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00534-0     Document Type: Article

References (7)

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