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Volumn 32, Issue 3, 1999, Pages 191-194

Valence band offsets at strained Ge/Sb/Si(100) and Ge/H/Si(100) interfaces

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; DIMERS; GERMANIUM; HYDROGEN; MONOLAYERS; SILICON; SUPERLATTICES; SURFACE ACTIVE AGENTS; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY; BAND STRUCTURE; INTERFACES (MATERIALS); STRAIN;

EID: 0033531286     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/3/002     Document Type: Article
Times cited : (5)

References (19)
  • 7
    • 33747589530 scopus 로고
    • Gunella R, Castrucci P, Pinto N, Diavoli I, Sebilleau D and De Crescenzi M 1996 Phys. Rev. B 54 1 Sakai A and Tatsumi T 1994 Appl. Phys. Lett. 64 52
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 52
    • Sakai, A.1    Tatsumi, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.