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Volumn 32, Issue 3, 1999, Pages 191-194
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Valence band offsets at strained Ge/Sb/Si(100) and Ge/H/Si(100) interfaces
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Author keywords
[No Author keywords available]
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Indexed keywords
ANTIMONY;
DIMERS;
GERMANIUM;
HYDROGEN;
MONOLAYERS;
SILICON;
SUPERLATTICES;
SURFACE ACTIVE AGENTS;
SURFACES;
X RAY PHOTOELECTRON SPECTROSCOPY;
BAND STRUCTURE;
INTERFACES (MATERIALS);
STRAIN;
STRAIN RELAXATION;
VALENCE BAND OFFSETS;
INTERFACES (MATERIALS);
EPITAXIAL GROWTH;
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EID: 0033531286
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/32/3/002 Document Type: Article |
Times cited : (5)
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References (19)
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