High resolution photoemission study of the surfactant desorption after Sb mediated Ge epitaxy on Si(001)

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 641-645

  De Padova, P ^a   Larciprete, R ^b   Quaresima, C ^a   Ottaviani, C ^a   Comicioli, C ^a   Crotti, C ^c   Hakansson M C ^a   Peloi, M ^a   Ressel, B ^a   Perfetti, P ^a  

^a CNR   (Italy)

^b ENEA   (Italy)

^c Sezione Trieste   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; DESORPTION; EPITAXIAL GROWTH; HETEROJUNCTIONS; PHOTOEMISSION; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GERMANIUM; SPECTROSCOPIC ANALYSIS; SURFACE ACTIVE AGENTS; SURFACE PHENOMENA;

DIMERIZATION; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0031702594     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00578-3     Document Type: Article

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