Investigations on implantation doping of wide-bandgap II-VI compounds using radioactive dopants

Journal of Physics D: Applied Physics

Volumn 32, Issue 3, 1999, Pages 291-297

  Wienecke, M ^a   Reinhold, B ^a   Rohrich J ^a   Bollmann, J ^a   Achtziger, N ^b   Reislohner U ^b   Witthuhn, W ^b   Hermann, S ^c  

^a HUMBOLDT UNIVERSITY   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; OPTOELECTRONIC DEVICES; RADIOISOTOPES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; ANNEALING; BAND STRUCTURE; HALL EFFECT;

IMPLANTATION DOPING; RADIOACTIVE DOPANTS; WIDE BAND-GAP COMPOUNDS;

ION IMPLANTATION;

EID: 0033531285     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/3/017     Document Type: Article

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