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Volumn 32, Issue 3, 1999, Pages 208-212
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Polycrystalline silicon thin films prepared by plasma enhanced chemical vapour deposition at 200°C using fluorinated source gas
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER MOBILITY;
GRAIN SIZE AND SHAPE;
PHOTOCONDUCTIVITY;
SCANNING ELECTRON MICROSCOPY;
SUBSTRATES;
SURFACES;
THIN FILMS;
X RAY DIFFRACTION;
ENERGY TRANSFER;
PLASMA APPLICATIONS;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING SILICON;
FLUORINATED SOURCE GAS;
POLYCRYSTALLINE SILICON THIN FILMS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
CHEMICAL VAPOR DEPOSITION;
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EID: 0033531275
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/32/3/005 Document Type: Article |
Times cited : (6)
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References (20)
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