Analysis of composition fluctuations in AlxGa1-xN

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 182-185

  Neubauer, B ^a   Rosenauer, A ^a   Gerthsen, D ^a   Ambacher, O ^b   Stutzmann, M ^b   Albrecht, M ^c   Strunk, H P ^c  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; COMPOSITION; COMPUTER SIMULATION; CRYSTAL LATTICES; DECOMPOSITION; IMAGE PROCESSING; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SEMICONDUCTOR GROWTH; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC SCALE; COMPOSITION FLUCTUATIONS; DIGITAL ANALYSIS OF LATTICE IMAGES PROGRAM PACKAGE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PLASMA INDUCED MOLECULAR BEAM EPITAXY; SELF ORGANIZED SUPERLATTICE STRUCTURES; STRAIN STATE ANALYSIS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033528911     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00397-3     Document Type: Article

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