|
Volumn 59, Issue 1-3, 1999, Pages 163-167
|
Impact of the ZnO buffer on the optical properties of GaN: time resolved micro-photoluminescence
c
MIE UNIVERSITY
(Japan)
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CRYSTAL DEFECTS;
EXCITONS;
IMPURITIES;
INTERFACES (MATERIALS);
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
STRAIN;
SUBSTRATES;
ZINC OXIDE;
BLUE SHIFT;
BUFFER LAYERS;
EXCITONIC TRANSITION LINES;
GALLIUM NITRIDE;
TIME RESOLVED MICRO PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
|
EID: 0033528904
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(98)00387-0 Document Type: Article |
Times cited : (5)
|
References (10)
|