Depth profile of the excitonic luminescence in gallium-nitride layers

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 677-682

  Siegle, H ^a   Hoffmann, A ^a   Eckey, L ^a   Thomsen, C ^a   Detchprohm, T ^a   Hiramatsu, K ^a   Davis, T ^a   Steeds, J W ^a  

^a Inst fur Festkorperphysik   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

BLUE SHIFT; EXCITONIC LUMINESCENCE; NITRIDE SEMICONDUCTORS; SPATIALLY-RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030676647     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)