Growth and dissolution rates on GaP(111)B facet surface during solution growth under a transverse static magnetic field

Crystal Research and Technology

Volumn 33, Issue 6, 1998, Pages 857-866

  Inatomi, Y ^a,c   Aoki, S ^b   Kuribayashi, K ^a,c   Sawada, Y ^b  

^a Inst Spare/Astronautical Science   (Japan)

^b TOKYO POLYTECHNIC UNIVERSITY   (Japan)

^c JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NEAR-INFRARED (NIR) MICROSCOPIC INTERFEROMETRY;

CRYSTAL GROWTH; CRYSTAL ORIENTATION; DISSOLUTION; HEAT CONVECTION; INTERFEROMETRY; MAGNETIC FIELD EFFECTS; MICROSCOPIC EXAMINATION; SEMICONDUCTOR GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 8844271100     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-4079(1998)33:6<857::aid-crat857>3.0.co;2-4     Document Type: Article

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