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Journal of Crystal Growth

Volumn 198-199, Issue pt 2, 1999, Pages 1216-1221

Growth of (1 1 1)-oriented PbTe thin films on vicinal Si(1 1 1) and on Si(1 0 0) using fluoride buffers

(7) Belenchuk, A a Shapoval, O a Kantser, V a Fedorov, A b Schunk, P c Schimmel, Th c Dashevsky, Z d

a INSTITUTE OF APPLIED PHYSICS (Moldova)

b INSTITUTE FOR SINGLE CRYSTALS (Ukraine)

c UNIVERSITY OF KARLSRUHE (Germany)

d BEN GURION UNIVERSITY OF THE NEGEV (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CALCIUM COMPOUNDS; CARRIER MOBILITY; CRYSTAL ORIENTATION; FILM GROWTH; HETEROJUNCTIONS; LEAD COMPOUNDS; MORPHOLOGY; SILICON; STRAIN; SURFACES;

BUNCHED STEPS; DOMAIN STRUCTURES; FLUORIDE BUFFERS; FLUORIDES; MISORIENTATION; ROTATIONAL TWINS; THERMAL MISMATCH STRAIN; TWO STEP GROWTH METHOD; VICINAL SILICON;

THIN FILMS;

EID: 0033514544 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01044-6 Document Type: Article

Times cited : (7)

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