Thermal imaging camera with linear Pb1-xSnxSe-on-Si infrared sensor array and combined JFET/CMOS read-out electronics

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 496-500

  Masek, J ^a   Fach, A ^a   John, J ^a   Muller P ^a   Paglino, C ^a   Zogg, H ^a   Buttler, W ^b  

^a ETH ZURICH   (Switzerland)

^b Ingenieur Buro Entwickl M   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM FLUORIDE BUFFER LAYER; CUT OFF WAVELENGTHS; INFRARED SENSOR ARRAY; LEAD TIN SELENIUM ON SILICON; READOUT ELECTRONICS CHIPS; THERMAL IMAGING CAMERA;

AMPLIFIERS (ELECTRONIC); ARRAYS; CALCIUM COMPOUNDS; CMOS INTEGRATED CIRCUITS; ELECTRIC IMPEDANCE; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; INFRARED IMAGING; JUNCTION GATE FIELD EFFECT TRANSISTORS; READOUT SYSTEMS; SENSORS;

CAMERAS;

EID: 0030211487     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(96)00032-0     Document Type: Article

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