Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in situ annealing

Journal of Crystal Growth

Volumn 197, Issue 3, 1999, Pages 466-470

  Udono, Haruhiko ^a   Kikuma, Isao ^a   Okada, Yasumasa ^b  

^a IBARAKI UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Anneal; Bond method; Lattice parameter; Melt growth; PL; ZnSe

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; LATTICE CONSTANTS; PARTIAL PRESSURE; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

BOND METHOD; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033514221     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00745-3     Document Type: Article

References (23)

1. D. Siche, H. Hartmann, K. Böttcher, E. Karause, Phys. Stat. Sol. (b) 194 (1996) 101.
2. P. Rudolph, N. Schäfer, T. Fukuda, Mater. Sci. Eng. R 15 (1995) 85.
3. M. Sano, Y. Yamashita, Y. Okuno, J. Appl. Phys. 74 (1993) 6133.
4. M. Aven, H.H. Woodbury, Appl. Phys. Lett. 1 (1962) 53.
5. I. Kikuma, M. Matsuo, T. Komuro, Jpn. J. Appl. Phys. 31 (1992) L531.
6. Y. Takano, T. Ishida, N. Matsunaga, N. Hashimoto, Jpn. J. Appl. Phys. 24 (1985) L239.
7. A.N. Morozov, V.T. Bublik, J. Crystal Growth 97 (1989) 475.
8. J.B. Mullin, B.W. Straughan, C.M.H. Driscoll, A.F.W. Willoughby, J. Appl. Phys. 47 (1976) 2584.
9. Y. Okada, F. Orito, Appl. Phys. Lett. 52 (1988) 582.
10. H. Udono, I. Kikuma, Y. Okada, J. Crystal Growth, 193 (1998) 39.
11. I. Kikuma, A. Kikuchi, M. Yageta, M. Sekine, M. Furukoshi, J. Crystal Growth 98 (1989) 302.
12. I. Kikuma, M. Matsuo, T. Komuro, Jpn. J. Appl. Phys. 30 (1991) 2718.
13. W.L. Bond, Acta Crystallogr. 13 (1960) 814.
14. E.R. Cohen, B.N. Taylor, Rev. Mod. Phys. 59 (1987) 1121.
15. T. Soma, Solid State Commun. 34 (1980) 927.
16. H. Okada, J. Appl. Phys. 80 (1996) 6740.
17. C.M.H. Driscoll, A.F.W. Willoughby, J.B. Mullin, B.W. Straughan, Inst. Phys. Conf. Ser. 24 (1975) 275.
18. A. Karevia, Ya.L. Kharif, I.Ch. Avetisov, J. Solid State Chem. 102 (1993) 1.
19. H. Hartmann, R. Mach, B. Selle, Wide gap II-VI compounds as electronic materials, in: E. Kaldis (Ed.), Current Topics in Materials Science, vol. 9, North-Holland, Amsterdam, 1982.
20. D.B. Laks, C.G. Van de Walle, G.F. Neumark, P.E. Blöchl, S.T. Pantelides, Phys. Rev. B 45 (1992) 10965.
21. K. Terashima, O. Ohmori, A. Okada, M. Watanabe, T. Nakanishi, in: H. Kukimoto, S. Miyazawa (Eds.), Semi-Insulating III-V Materials, OHM, North-Holland, Amsterdam, 1986, p. 187.
22. N.F. Chen, Y. Wang, H. He, L. Lin, Phys. Rev. B 54 (1996) 8516.
23. N.F. Chen, Y. Wang, H. He, Z. Wang, L. Lin, O. Oda, Appl. Phys. Lett. 69 (1996) 3890.