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Journal of Crystal Growth

Volumn 197, Issue 3, 1999, Pages 529-536

Laser emission in HgCdTe in the 2-3.5 μm range

(5) Bleuse, Joël a Bonnet Gamard, Joël a Mula, Guido b Magnea, Noël a Pautrat, Jean Louis a

a CEA GRENOBLE (France)

b INFM (Italy)

Author keywords

Auger recombination; HgCdTe; Laser; Mid infrared; Separate confinement heterostructure

Indexed keywords

COMPOSITION EFFECTS; ENERGY GAP; HETEROJUNCTIONS; LIGHT EMISSION; MERCURY COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

AUGER RECOMBINATION; SEPARATE CONFINEMENT HETEROSTRUCTURES;

SEMICONDUCTOR LASERS;

EID: 0033514170 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00746-5 Document Type: Article

Times cited : (48)

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