Point defects in Te-rich CdTe

Journal of Crystal Growth

Volumn 161, Issue 1-4, 1996, Pages 144-147

  Panchouk, O ^a   Fochouk, P ^a   Feichouk, P ^a  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; CARRIER CONCENTRATION; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; CRYSTALLIZATION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE EFFECTS; HIGH TEMPERATURE PROPERTIES; SINGLE CRYSTALS; STOICHIOMETRY; VAPOR PRESSURE;

CADMIUM TELLURIDE; HIGH TEMPERATURE DEFECTS EQUILIBRIUM; HIGH TEMPERATURE ELECTRICAL PROPERTIES; TELLURIUM VAPOR PRESSURE; UNCONTROLLED RESIDUAL IMPURITY;

POINT DEFECTS;

EID: 0030121686     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00624-9     Document Type: Article

References (5)

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4. K. Zanio, Appl. Phys. Lett. 15 (1969) 260.
5. R. Jasinskaite, A. Martinaitis, A. Sakalas and O. Panchuk, Solid State Commun. 58 (1986) 681.