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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 437-440

Electrical characterization of low temperature He-ion irradiated GaN

(3) Hayes, M a Goodman, S A a Auret, F D a

a UNIVERSITY OF PRETORIA (South Africa)

Author keywords

Defects; DLTS; Electrical; GaN; Hall; Irradiation

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; HALL EFFECT; HELIUM; ION BOMBARDMENT; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033513857 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(98)00722-8 Document Type: Article

Times cited : (2)

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