Oxidation state and lattice site occupation of ions implanted into rutile

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 752-757

  Meyer, O ^a   Fromknecht, R ^a   Khubeis, I ^b  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^b AL BALQA APPLIED UNIVERSITY   (Jordan)

Author keywords

Channeling; Insulator; Ion implantation; Lattice location; Oxidation state

Indexed keywords

ANNEALING; CRYSTAL LATTICES; CRYSTAL ORIENTATION; ION IMPLANTATION; OXIDATION; POINT DEFECTS; PRECIPITATION (CHEMICAL); RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ANGULAR SCAN MEASUREMENT; LATTICE SITE LOCATION; RUTHERFORD BACKSCATTERING AND CHANNELING (RBS-C);

TITANIUM DIOXIDE;

EID: 0033513718     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00700-9     Document Type: Article

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