The role of Fe on the crystallisation of α-Si3N4 from amorphous Si-N formed by ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 534-539

  Li, Z L ^a   Wong Leung, J ^a   Deenapanray, P N K ^a   Conway, M ^a   Chivers, D J ^b   Fitz Gerald, J D ^a   Williams, J S ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b RICARDO UK LTD   (United Kingdom)

Author keywords

Ball milling; Defects; Ion implantation; Silicon nitride

Indexed keywords

MECHANOCHEMISTRY;

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; BALL MILLING; CRYSTAL DEFECTS; CRYSTALLIZATION; ION IMPLANTATION; IRON; NITROGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; STOICHIOMETRY;

SEMICONDUCTING FILMS;

EID: 0033513697     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00815-5     Document Type: Article

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