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Chinese Physics Letters

Volumn 16, Issue 8, 1999, Pages 605-607

Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure

(6) Wang, Yong Qiang a Zhao, Tai Ping a Cui, Xiao Ming a Ma, Zhen Chang b Zong, Wan Hua b Qin, Guo Gang a,c

a PEKING UNIVERSITY (China)

b 13th Inst Min of Electron Indust (China)

c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EFFICIENCY; ELECTROLUMINESCENCE; GOLD COMPOUNDS; INDIUM COMPOUNDS; LIGHT; OXIDE FILMS; SILICON COMPOUNDS;

ELECTRON BEAM DEPOSITIONS; FORWARD BIAS; INDIUM TIN OXIDE FILMS; MAGNETRON-SPUTTERING; NANO SCALE; OXIDE LAYER; P-TYPE SI; POWER-EFFICIENCY; SI (100) SUBSTRATE; SI OXIDE;

TIN OXIDES;

EID: 0033466857 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/16/8/022 Document Type: Article

Times cited : (2)

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