Investigation of hole mobility in GaInP/(In)GaAs/GaAs p-type modulation doped heterostructures

Chinese Physics Letters

Volumn 16, Issue 1, 1999, Pages 50-52

  Yang, Quan Kui ^a   Li, Ai Zhen ^a   Chen, Jian Xin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM ARSENIDE; HETEROJUNCTIONS; HOLE MOBILITY; INDIUM ALLOYS; IONIZATION OF GASES; MODULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS;

DOPING METHODS; GAINP/GAAS; GAS SYSTEMS; GAS-SOURCE MOLECULAR BEAM EPITAXY; MODULATION-DOPED; OFFSET RATIO; P CHANNELS; P-TYPE; TWO-DIMENSIONAL HOLE GAS; VALENCE-BAND OFFSET;

III-V SEMICONDUCTORS;

EID: 0033444125     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/16/1/018     Document Type: Article

References (17)

1. C. Gossard, Molecular Beam Epitaxy and Heterostructures, edited by L. L. Chang and K. Ploog (Martinus NijhofF, Dordrecht, Netherlands, 1985) p.499.
2. L. Stormer, R. Dingle, A. C. Gossard, W. Wiegmann and M. D. Sturge, Solid State Commun. 29 (1979) 705.
3. M. Solomon and H. Morkoc, IEEE Trans. Electron Dev. ED-28 (1984) 790.
4. F. Schubert, A. Fischer and K. Ploog, IEEE Trans. Electron Dev. ED-33 (1986) 625.
5. V. Umansky, R. de Picciotto and M. Heiblum, Appl. Phys. Lett. 71 (1997) 687.
6. R. Shikler, M. Heiblum and V. Umansky, Phys. Rev. B 55 (1997) 15427.
7. A. G. Baca, J. C. Zolper, M. E. Sherwin, P. J. Robertson, R. J. Shul, A. J. Howard, D. J. Reiger and J. F. Klem, GaAs IC Symp. 59 (1994) 1307.
8. G. Baccarani, M. R. Wordeman and R. H. Dennard, IEEE Trans. Electron Dev. ED-31 (1984) 4522.
9. M. Henni, P. A. Crump, P. J. Rodgers and B. L. Gallagher, Microelectronics J. 26 (1995) 739.
10. T. S. Cheng, D. Johnston, J. Diddleton, K. Strickland and O. H. Hughes, J. Vac. Sci. Technol. B 12 (1994) 2621.
11. A. Yu. Silov, V. M. Asnin and N. S. Averkiev, J. Appl. Phys. 73 (1993) 7775.
12. K. Uchida, T. Arai and K. Matsumoto, J. Appl. Phys. 81 (1997) 771.
13. J. J. O'Shea, C. M. Reaves and S. P. DenBaars, Appl. Phys. Lett. 69 (1996) 3022.
14. J. X. Chen, A. Z. Li, Q. K. Yang, C. Lin, Y. C. Ren, S. R. Jin, C. C. Li and M. Qi, J. Cryst. Growth (in press).
15. E. F. Schubert, L. Pfeiffer, K. W. West and A. Izabelle, Appl. Phys. Lett. 54 (1989) 1350.
16. C. Y. P. Chao and S. L. Chuang, Phys. Rev. B 46 (1992) 4110.
17. S. L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1993) p. 153.