Spontaneous polarization and piezoelectric field in nitride semiconductor heterostructures

Journal of the Korean Physical Society

Volumn 34, Issue SUPPL. 3, 1999, Pages

  Morkoç, Hadis ^a   Cingolanl, Roberto ^a,f   Lambrecht, Walter ^b   Gil, Bernard ^c   Pavlidis, D ^d   Jiang, H X ^e   Lin, J ^e  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^b CASE WESTERN RESERVE UNIVERSITY   (United States)

^c UNIV MONTPELLIER   (France)

^d UNIVERSITY OF MICHIGAN   (United States)

^e KANSAS STATE UNIVERSITY   (United States)

^f UNIVERSITY OF SALENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033426692     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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3. S. N. Mohammad and H. Morkoç, Progress in Quantum Electronics 20, 361 (1996).
4. Group III Nitride Semiconductor Compounds, Edited by B. Gil (Clarendon Press, Oxford, 1998), ISBN 0-19850159-5.
5. H. Morkoç, Nitrides Semiconductors and Devices, Springer, in press.
6. S. Nakamura and G. Fosol, The Blue Laser (Springer Verlag, 1997).
7. M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996).
8. G. Y. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang and S. Krishnankutty, Appl. Phys. Lett. 71, 2154 (1997).
9. H. Morkoç, Wurtzite GaN-Based Heterostructures by Molecular Beam Epitaxy, IEEE J. Selected topics in Quantum Electronics (Eds. Richard Miles and I. Akasaki, 1998), Vol. 4, No. 3, p. 537.