Application of reactive ion etching to the fabrication of microstructure on Mo/Si multilayer

Chinese Physics Letters

Volumn 16, Issue 9, 1999, Pages 665-666

  Le, Zi Chun ^a   Dreeskornfeld, L ^b   Rahn, S ^b   Segler, R ^b   Kleineberg, U ^b   Heinzmann, U ^b  

^a JILIN UNIVERSITY   (China)

^b BIELEFELD UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MULTILAYERS; PHOTORESISTS;

DOUBLE LAYERS; ETCH PROFILE; ETCH RATES; LINE-AND-SPACE; LINES STRUCTURES; MO/SI MULTILAYER; MULTILAYER MIRROR; REACTIVE-ION ETCHING; RESIST PATTERN; SPACE STRUCTURE;

REACTIVE ION ETCHING;

EID: 0033424644     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/16/9/016     Document Type: Article

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