Direct observation of synchrotron-radiation-stimulated desorption of thin SiO2 films on Si(111) by scanning tunneling microscopy

Surface Science

Volumn 437, Issue 1, 1999, Pages

  Miyamae, T ^a   Uchida, H ^b   Munro, I H ^c   Urisu, T ^a  

^a INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DESORPTION; MOLECULES; MORPHOLOGY; OXYGEN; SCANNING TUNNELING MICROSCOPY; SILICA; SURFACE TOPOGRAPHY; SYNCHROTRON RADIATION; TEMPERATURE; THIN FILMS;

PHOTON STIMULATED DESORPTION; THERMAL DESORPTION; VOLATILE SILICON DIOXIDES;

SEMICONDUCTING SILICON;

EID: 0033365976     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00423-9     Document Type: Article

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