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Volumn 355, Issue , 1999, Pages 233-238
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Structure and properties of diamond films deposited on porous silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
COALESCENCE;
CRYSTALLINE MATERIALS;
DEPOSITION;
ETHANOL;
FILM GROWTH;
HYDROGEN;
NUCLEATION;
POROUS SILICON;
SILICON WAFERS;
THERMAL STRESS;
HOT FILAMENT CHEMICAL VAPOR DEPOSITION;
DIAMOND FILMS;
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EID: 0033365070
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(99)00488-5 Document Type: Article |
Times cited : (13)
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References (13)
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