Influence of oxidation and carbon-containing contamination in the stabilization of the luminescence in porous silicon

Thin Solid Films

Volumn 354, Issue 1, 1999, Pages 34-37

  Guerrero Lemus, R ^a   Moreno, J D ^a   Martin Palma R J ^a   Ben Hander, F ^a   Martinez Duart J M ^a   Fierro, J L G ^b   Gomez Garrido P ^c  

^a CSIC   (Spain)

^b INSTITUTO DE CATÁLISIS Y PETROLEOQUÍMICA   (Spain)

^c UNIVERSIDAD DE LA LAGUNA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ANNEALING; CARBON; CONTAMINATION; ENERGY GAP; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXIDATION; PHOTOLUMINESCENCE; POROUS SILICON; QUANTUM THEORY; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIRECT BAND GAP; QUANTUM SIZE EFFECTS;

SEMICONDUCTING SILICON;

EID: 0033364052     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00576-3     Document Type: Article

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