InP-based 1.55μm Resonant Cavity Light-Emitting Diode with two Epitaxial Mirrors

Physica Scripta T

Volumn 79, Issue , 1999, Pages 135-137

  Salomonsson, F ^b   Rapp, S ^b   Streubel, K ^a   Hammar, M ^b   Daleiden, J ^b  

^a Mitel Semiconductor AB   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; EPITAXIAL GROWTH; LIGHT REFLECTION; MIRRORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

RESONANT CAVITY LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0033363502     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)

1. Purcel, E. M., Phys. Rev. 69, 681 (1946).
2. Shubert, E. F., Hunt, N. E. J., Malik, R. J., Micovic, M. and Miller, D. L., J. Lightwave Technol. 14 (1996) 1721.
3. De Neve, H. et al., Phot. Techn. Lett. 7 (1995) 287.
4. Corbett, B., Considine, L., Walsh, S. and Kelly, W. M., Phot. Techn. Lett. 5 (1993) 1041.
5. Hunt, N. E. J., Shubert, E. F., Logon, E. F. and Zydzik, G. J., Appl. Phys. Lett. 61 (1992) 2287.
6. Depreter, B. et al., "InP microcavity LED emitting at 1.55 μn" LEOS, Nov 97, San Francisco, Ca, USA, 241.
7. Christenson, G. L. et al., Phot. Techn. Lett. 9 (1997) 725.
8. Streubel, K. et al., J. Cryst. Growth 143, 7 (1994).
9. Lourdudoss, S. et al., Mat. Sci. Eng. B28, 179 (1994).
10. De Neve, H. et al., Appl. Phys. Lett. 70, (1997) 799.
11. Rapp, S. et al., "All Epitaxial Single-Fused 1.55 μm Vertical Cavity Laser Based on an InP Bragg Reflector", Proceedings of the 10th International Conference on Indiumphosphide and Related Materials, 11-15 May 1998, Tsukuba Japan 303.
12. Gebretsadik, H., Kamath, K., Zhou, W-D. and Battacharya, P., Appl. Phys. Lett. 72 (1998) 135.
13. Streubel, K., Helin, U., Bäcklin, E. and Johansson, Å., "High Brightness Visible (660 nm) Resonant-Cavity Light-Emitting Diode", to be published in Photon. techn. Lett.