All epitaxial single-fused 1.55μm vertical cavity laser based on an InP Bragg reflector

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 303-306

  Rapp, S ^a   Salomonsson, F ^a   Streubel, K ^a   Mogg, S ^a   Wennekes, F ^a   Bentell, J ^a   Hammar, M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; ETCHING; LASER PULSES; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

BRAGG REFLECTOR LASERS; THRESHOLD CURRENT DENSITY; VERTICAL CAVITY SURFACE EMITTING LASERS; WET ETCHING;

SEMICONDUCTOR LASERS;

EID: 0032296388     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)