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Volumn 16, Issue 3, 1999, Pages 64-71

Test and reliability: partners in IC manufacturing, Part 1

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COPPER; DESIGN FOR TESTABILITY; ELECTROMIGRATION; FAILURE ANALYSIS; INTEGRATED CIRCUIT TESTING; OXIDES; RELIABILITY; SERVICE LIFE; STRESSES; THERMAL EXPANSION; WEAR OF MATERIALS;

EID: 0033360553     PISSN: 07407475     EISSN: None     Source Type: Journal    
DOI: 10.1109/54.785836     Document Type: Article
Times cited : (10)

References (11)
  • 1
    • 0343808034 scopus 로고    scopus 로고
    • Materials Reliability Issues in Microelectronics
    • various years
    • "Materials Reliability Issues in Microelectronics," Materials Research Soc. Proc., various years.
    • Materials Research Soc. Proc.
  • 2
    • 0343808035 scopus 로고    scopus 로고
    • Stress-Induced Phenomena in Metallization
    • (American Institute of Physics), various years
    • "Stress-Induced Phenomena in Metallization," Int'l Stress Void Workshops (American Institute of Physics), various years.
    • Int'l Stress Void Workshops
  • 4
    • 0000541904 scopus 로고    scopus 로고
    • Topical Review: Electromigration in Thin Film Conductors
    • J. Lloyd, "Topical Review: Electromigration in Thin Film Conductors," Semiconductor Science Technology, Vol. 12, 1997, pp. 1,177-1,185.
    • (1997) Semiconductor Science Technology , vol.12 , pp. 1177-1185
    • Lloyd, J.1
  • 5
    • 0031188354 scopus 로고    scopus 로고
    • Electromigration: A Review
    • D. Pierce and P.G. Brusius, "Electromigration: A Review," Microelectronics Reliability, Vol. 37, No. 7, 1997, pp. 1,053-1,072.
    • (1997) Microelectronics Reliability , vol.37 , Issue.7 , pp. 1053-1072
    • Pierce, D.1    Brusius, P.G.2
  • 6
    • 84990733152 scopus 로고
    • Mass Transport of Aluminum by Momentum Exchange with Conducting Electrons
    • J.R. Black, "Mass Transport of Aluminum by Momentum Exchange With Conducting Electrons," Proc. Int'l Reliability Physics Symp., 1967, pp. 148-159.
    • (1967) Proc. Int'l Reliability Physics Symp. , pp. 148-159
    • Black, J.R.1
  • 7
    • 21544441552 scopus 로고
    • Electromigration in Thin Aluminum Films
    • I.A. Blech and E.S. Meieran, "Electromigration in Thin Aluminum Films," J. Applied Physics, Vol. 40, No. 2, 1968, pp. 485-491.
    • (1968) J. Applied Physics , vol.40 , Issue.2 , pp. 485-491
    • Blech, I.A.1    Meieran, E.S.2
  • 8
    • 85075781790 scopus 로고
    • Modeling Stress-Induced Void Growth in AL-4 wt % Cu Lines
    • S. Rauch and T. Sullivan, "Modeling Stress-Induced Void Growth in AL-4 wt % Cu Lines," Proc. SPIE, Vol. 1,805, 1993, pp. 197-208.
    • (1993) Proc. SPIE , vol.1805 , pp. 197-208
    • Rauch, S.1    Sullivan, T.2
  • 10
    • 0032314506 scopus 로고    scopus 로고
    • High Volume Microprocessor Test Escapes, an Analysis of Defects Our Tests Are Missing
    • Los Alamitos, Calif., CS Press, Oct.
    • W.N. Needham, C. Prunty, and E.H. Yeoh, "High Volume Microprocessor Test Escapes, an Analysis of Defects Our Tests Are Missing," Int'l Test Conf., Los Alamitos, Calif., CS Press, Oct. 1998, pp. 25-34.
    • (1998) Int'l Test Conf. , pp. 25-34
    • Needham, W.N.1    Prunty, C.2    Yeoh, E.H.3
  • 11
    • 0342937006 scopus 로고
    • Quiescent Current Analysis and Experimentation of Defective CMOS Circuits
    • R.K. Gulati and C.F. Hawkins, eds. Kluwer Academic Publishing, Norwall, Mass.
    • DDQ Testing in CMOS ICs, R.K. Gulati and C.F. Hawkins, eds. Kluwer Academic Publishing, Norwall, Mass., 1993.
    • (1993) DDQ Testing in CMOS ICs
    • Segura, J.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.