Millimeter-wave power HEMTs

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1575-1579

  Arai, Shigemitsu ^a   Tokuda, Hirokuni ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; HETEROJUNCTIONS; MILLIMETER WAVE DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

MILLIMETER WAVE HETEROJUNCTIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031251063     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00107-X     Document Type: Article

References (4)

1. Mimura, T., et al., Jpn. J. Appl. Phys., 1980, 19, p. 225.
2. Duh, K. H. G., et al., IEEE Microwave & Guided Wave Letts., 1996, 1, p. 114.
3. Arai, S., et al., 1995 IEEE GaAs IC Symp. Digest, p. 296.
4. Arai, S., et al., 1991 IEEE GaAs IC Symp. Digest, p. 105.