-
1
-
-
0342672838
-
A 40-in. (1 m) diagonal direct-view TFT-LCD by seamless-connection technique
-
T. Shinomiya, M. Kawabata, N. Nagae, Y. Izumi, K. Fujimori, F. Fujiwara, M. Shiota, Y. Ishii, F. Funada, A 40-in. (1 m) diagonal direct-view TFT-LCD by seamless-connection technique, J. of the Society for Information Display (1997), 363.
-
(1997)
J. of the Society for Information Display
, pp. 363
-
-
Shinomiya, T.1
Kawabata, M.2
Nagae, N.3
Izumi, Y.4
Fujimori, K.5
Fujiwara, F.6
Shiota, M.7
Ishii, Y.8
Funada, F.9
-
2
-
-
84897724854
-
A-Si TFT technologies for AM-LCDS
-
and references therein
-
Ibaraki N. a-Si TFT technologies for AM-LCDS. Mater. Res. Symp. Proc. 336:1994;749. and references therein.
-
(1994)
Mater. Res. Symp. Proc.
, vol.336
, pp. 749
-
-
Ibaraki, N.1
-
3
-
-
85031587026
-
Matrix of light sensors addressed by a-Si:H TFTs on a flexible plastic substrate
-
Electronic Imaging 99, IS and T/SPIE, 11th International Symposium, San Jose, CA.
-
S. Polach, D. Horst, G. Maier, T. Kallfass, E.H. Lueder, Matrix of light sensors addressed by a-Si:H TFTs on a flexible plastic substrate, Proc. of Conference 3649 on Sensors, Cameras, and Systems for Scientific/Industrial Applications, Electronic Imaging 99, IS and T/SPIE, 11th International Symposium, San Jose, CA.
-
Proc. of Conference 3649 on Sensors, Cameras, and Systems for Scientific/Industrial Applications
-
-
Polach, S.1
Horst, D.2
Maier, G.3
Kallfass, T.4
Lueder, E.H.5
-
4
-
-
0343543018
-
A reflective active-matrix LCD using a two mask thin film diode process
-
M.G. Pitt, N.A.J.M. van Aerle, F. Leehouts, J.M. Havekes, H.F. van Rooijen, H.W.M. Schell, F.C. van de Ven, A reflective active-matrix LCD using a two mask thin film diode process, Symp. Inform. Display, Digest XXVIII, 1997, p. 473.
-
(1997)
Symp. Inform. Display, Digest
, vol.28
, pp. 473
-
-
Pitt, M.G.1
Van Aerle, N.A.J.M.2
Leehouts, F.3
Havekes, J.M.4
Van Rooijen, H.F.5
Schell, H.W.M.6
Van De Ven, F.C.7
-
5
-
-
0028419965
-
Metal/insulator/metal type structures based on amorphous carbon-silicon alloys: Electronic properties in dark conditions and under illumination
-
Vincenzoni R., Leo G., Galluzzi F. Metal/insulator/metal type structures based on amorphous carbon-silicon alloys: electronic properties in dark conditions and under illumination. Diamond Relat. Mater. 3:1994;874.
-
(1994)
Diamond Relat. Mater.
, vol.3
, pp. 874
-
-
Vincenzoni, R.1
Leo, G.2
Galluzzi, F.3
-
6
-
-
0026388851
-
Diode network addressing of LC TV displays
-
Nicholas K.H., Knapp A.G., French I.D., Guest A.J., Pearson A.D., Hughes J.R., Ford R.A., Chapman J.A., Krekels H.C.J., Hemings M.C., van Roosmalen A.J., Hartman R.A. Diode network addressing of LC TV displays. Symp. Inf. Display Proc. 32-34:1991;395.
-
(1991)
Symp. Inf. Display Proc.
, vol.3234
, pp. 395
-
-
Nicholas, K.H.1
Knapp, A.G.2
French, I.D.3
Guest, A.J.4
Pearson, A.D.5
Hughes, J.R.6
Ford, R.A.7
Chapman, J.A.8
Krekels, H.C.J.9
Hemings, M.C.10
Van Roosmalen, A.J.11
Hartman, R.A.12
-
7
-
-
0343543016
-
Amorphous silicon p-i-n-i-p and n-i-p-i-n diodes
-
Dresner J. Amorphous silicon p-i-n-i-p and n-i-p-i-n diodes. Appl. Phys. Lett. 48:1986;1006.
-
(1986)
Appl. Phys. Lett.
, vol.48
, pp. 1006
-
-
Dresner, J.1
-
8
-
-
0027906777
-
Two dimensional image sensor based on amorphous silicon alloy pin diode
-
de Cesare G., Di Rosa P., La Monica S., Salotti R., Schirone L., Saggio G., Verona E. Two dimensional image sensor based on amorphous silicon alloy pin diode. J. Non-Cryst. Solids. 164-166:1993;789.
-
(1993)
J. Non-Cryst. Solids
, vol.164-166
, pp. 789
-
-
De Cesare, G.1
Di Rosa, P.2
La Monica, S.3
Salotti, R.4
Schirone, L.5
Saggio, G.6
Verona, E.7
-
10
-
-
85031580130
-
-
web site:
-
web site: http://www.SiliconVision.de.
-
-
-
-
11
-
-
0030406225
-
A switching device based on a-Si:H n-i-dp-i-n stacked structure: Modeling and characterization
-
Caputo D., de Cesare G. A switching device based on a-Si:H n-i-dp-i-n stacked structure: modeling and characterization. IEEE Trans. Electron Devices. 43:1996;2109.
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, pp. 2109
-
-
Caputo, D.1
De Cesare, G.2
-
12
-
-
0032068570
-
Modulation of threshold voltages in bidirectional a-Si:H switching devices
-
Caputo D., de Cesare G. Modulation of threshold voltages in bidirectional a-Si:H switching devices. J. Non-Cryst. Solids. 227-230:1998;380.
-
(1998)
J. Non-Cryst. Solids
, vol.227-230
, pp. 380
-
-
Caputo, D.1
De Cesare, G.2
-
13
-
-
0001080366
-
Computer analysis of the role of the p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells
-
Arch J.K., Rubinelli F.A., Hou J.Y., Fonash S.J. Computer analysis of the role of the p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells. J. Appl. Phys. 69:1991;7057.
-
(1991)
J. Appl. Phys.
, vol.69
, pp. 7057
-
-
Arch, J.K.1
Rubinelli, F.A.2
Hou, J.Y.3
Fonash, S.J.4
-
16
-
-
0029548131
-
Two-dimensional amorphous silicon image sensor arrays
-
Street R.A., Wu X.D., Weisfield R., Ready S., Apte R., Nguyen M., Nylen P. Two-dimensional amorphous silicon image sensor arrays. Mater. Res. Soc. Symp. Proc. 377:1995;757.
-
(1995)
Mater. Res. Soc. Symp. Proc.
, vol.377
, pp. 757
-
-
Street, R.A.1
Wu, X.D.2
Weisfield, R.3
Ready, S.4
Apte, R.5
Nguyen, M.6
Nylen, P.7
-
17
-
-
84897740573
-
A large area, high-resolution a-Si:H array for X-ray imaging
-
Antonuk L.E., El-Mohri Y., Huang W., Siewerdsen J., Yorkston J., Street R.A. A large area, high-resolution a-Si:H array for X-ray imaging. Mater. Res. Soc. Symp. Proc. 336:1994;855.
-
(1994)
Mater. Res. Soc. Symp. Proc.
, vol.336
, pp. 855
-
-
Antonuk, L.E.1
El-Mohri, Y.2
Huang, W.3
Siewerdsen, J.4
Yorkston, J.5
Street, R.A.6
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