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Volumn 78, Issue 2, 1999, Pages 108-113

Amorphous silicon switching device for high-resolution two-color photodetector matrix

Author keywords

[No Author keywords available]

Indexed keywords

PHOTODETECTORS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

EID: 0033358283     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00226-5     Document Type: Article
Times cited : (5)

References (17)
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    • and references therein
    • Ibaraki N. a-Si TFT technologies for AM-LCDS. Mater. Res. Symp. Proc. 336:1994;749. and references therein.
    • (1994) Mater. Res. Symp. Proc. , vol.336 , pp. 749
    • Ibaraki, N.1
  • 5
    • 0028419965 scopus 로고
    • Metal/insulator/metal type structures based on amorphous carbon-silicon alloys: Electronic properties in dark conditions and under illumination
    • Vincenzoni R., Leo G., Galluzzi F. Metal/insulator/metal type structures based on amorphous carbon-silicon alloys: electronic properties in dark conditions and under illumination. Diamond Relat. Mater. 3:1994;874.
    • (1994) Diamond Relat. Mater. , vol.3 , pp. 874
    • Vincenzoni, R.1    Leo, G.2    Galluzzi, F.3
  • 7
    • 0343543016 scopus 로고
    • Amorphous silicon p-i-n-i-p and n-i-p-i-n diodes
    • Dresner J. Amorphous silicon p-i-n-i-p and n-i-p-i-n diodes. Appl. Phys. Lett. 48:1986;1006.
    • (1986) Appl. Phys. Lett. , vol.48 , pp. 1006
    • Dresner, J.1
  • 10
    • 85031580130 scopus 로고    scopus 로고
    • web site:
    • web site: http://www.SiliconVision.de.
  • 11
    • 0030406225 scopus 로고    scopus 로고
    • A switching device based on a-Si:H n-i-dp-i-n stacked structure: Modeling and characterization
    • Caputo D., de Cesare G. A switching device based on a-Si:H n-i-dp-i-n stacked structure: modeling and characterization. IEEE Trans. Electron Devices. 43:1996;2109.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 2109
    • Caputo, D.1    De Cesare, G.2
  • 12
    • 0032068570 scopus 로고    scopus 로고
    • Modulation of threshold voltages in bidirectional a-Si:H switching devices
    • Caputo D., de Cesare G. Modulation of threshold voltages in bidirectional a-Si:H switching devices. J. Non-Cryst. Solids. 227-230:1998;380.
    • (1998) J. Non-Cryst. Solids , vol.227-230 , pp. 380
    • Caputo, D.1    De Cesare, G.2
  • 13
    • 0001080366 scopus 로고
    • Computer analysis of the role of the p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells
    • Arch J.K., Rubinelli F.A., Hou J.Y., Fonash S.J. Computer analysis of the role of the p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells. J. Appl. Phys. 69:1991;7057.
    • (1991) J. Appl. Phys. , vol.69 , pp. 7057
    • Arch, J.K.1    Rubinelli, F.A.2    Hou, J.Y.3    Fonash, S.J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.