Application of SiO2 films deposited by TICS/O2 PECVD to InSb MISFET

Materials Research Society Symposium - Proceedings

Volumn 535, Issue , 1999, Pages 249-253

  Sugiura, O ^a   Akiba, T ^a   Idris, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC INSULATING MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATES (TRANSISTOR); MISFET DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; STRUCTURE (COMPOSITION); THRESHOLD VOLTAGE;

FILM THICKNESS; INDIUM ANTIMONIDE; TETRAISOCYANATE SILANE;

SEMICONDUCTING FILMS;

EID: 0033357385     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. G. S. Forbes and H. H. Anderson : J. Am. Chem. Soc., 62 (1940) 761.
2. I. ldris and O. Sugiura : Jpn. J. Appl. Phys., 34 (1995) L772.
3. I. ldris and O. Sugiura : Jpn. J. Appl. Phys., 37 (1998) 6562.