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Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 963-966

Defect-limited carrier diffusion in In0.53Ga0.47As-InP single quantum well

(5) Monte, A F G a Da Silva, S W a Cruz, J M R a Morais, P C a Cox, H M b

a UNIVERSITY OF BRASILIA (Brazil)

b NOKIA RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRON TRAPS; HOLE TRAPS; INTERDIFFUSION (SOLIDS); PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ARRHENIUS FUNCTIONS; DEFECT-LIMITED CARRIER DIFFUSIONS; NONRADIATIVE RECOMBINATION CHANNELS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033354058 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00583-9 Document Type: Article

Times cited : (7)

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