Novel edge suppression technique for planar avalanche photodiodes

IEEE Journal of Quantum Electronics

Volumn 35, Issue 12, 1999, Pages 1863-1869

  Haralson II, Joe N ^a,b,c,d   Brennan, Kevin F ^a,e,f  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c MICHIGAN STATE UNIVERSITY   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

AVALANCHE PHOTODIODES; JOINT OPENING EFFECT;

PHOTODIODES;

EID: 0033351146     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.806599     Document Type: Article

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