Low temperature synthesis of ferroelectric Sr2Nb2O7 thin films by rapid thermal annealing

Integrated Ferroelectrics

Volumn 25, Issue 1-4, 1999, Pages 195-203

  Shoyama, Masashi ^a   Tsuzuki, Akihiro ^b   Kato, Kazumi ^b   Murayama, Norimitsu ^b  

^a Mie Prefecture Industrial Research Institute   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Low temperature process; MFMIS structure; Non volatile memory; RTA process; Sol gel method; Sr2Nb2O7 thin film

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DIELECTRIC LOSSES; FERROELECTRIC MATERIALS; FILM PREPARATION; LOW TEMPERATURE EFFECTS; NONVOLATILE STORAGE; PERMITTIVITY; POLARIZATION; RAPID THERMAL ANNEALING; SOL-GELS; STRONTIUM COMPOUNDS;

CRYSTALLINITY; STRONTIUM NIOBATE;

THIN FILMS;

EID: 0033351044     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589908210172     Document Type: Article

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