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Volumn 273-274, Issue , 1999, Pages 632-635

Ab initio calculations of hyperfine interactions for vacancy and Ni point defects in diamond

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRON TRANSITIONS; GROUND STATE; POINT DEFECTS;

EID: 0033350448     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00591-8     Document Type: Article
Times cited : (6)

References (24)
  • 11
    • 0039139235 scopus 로고
    • Point Defects in Semiconductors I, Theoretical Aspects
    • Springer, Heidelberg
    • M. Lannoo, J. Bourgoin, Point Defects in Semiconductors I, Theoretical Aspects, Vol. 22, Springer Ser. Solid. State Sci., Springer, Heidelberg, 1981.
    • (1981) Springer Ser. Solid. State Sci. , vol.22
    • Lannoo, M.1    Bourgoin, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.